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HE 1 Form A High Capacity
3. Turn on time vs. ambient temperature
characteristics
Tested sample: All; LED current: 5 mA; Load voltage:
10 V (DC); Continuous load current: 100 mA (DC)
5
4
3
4. Turn off time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: 10 V (DC);
Continuous load current: 100 mA (DC)
1
0.8
0.6
5. LED operate current vs. ambient
temperature characteristics
Tested sample: All; Load voltage: 10 V (DC);
Continuous load current: 100mA (DC)
5
4
3
2
1
0.4
0.2
AQV252G
AQV251G
2
1
0
–40
–20
0 20 40 60
80 85
0
-40
-20
0 20 40 60
8085
0
–40
–20
0 20 40 60
80 85
Ambient temperature, ° C
6. LED turn off current vs. ambient temperature
characteristics
Tested sample: All; Load voltage: 10 V (DC);
Continuous load current: 100mA (DC)
5
4
3
Ambient temperature, ° C
7. LED dropout voltage vs. ambient
temperature characteristics
Tested sample: All;
LED current: 5 to 50 mA
1.5
1.4
1.3
Ambient temperature, ° C
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25 ° C 77 ° F
5
4
AQV251G
3
AQV252G
2
1
50mA
- 0. 4 - 0. 3 - 0. 2 - 0. 1
0. 1 0 .2 0. 3 0 .4
2
1.2
30mA
-1
Voltage, V
20mA
-2
1
1.1
10mA
5m A
-3
-4
0
–40 –20
0 20 40 60
80 85
1
–40 –20
0 20 40 60
80 85
-5
Ambient temperature, ° C
Ambient temperature, ° C
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 4 and 6;
Ambient temperature: 25 ° C 77 ° F
10 -4
10 -6
10. Turn on time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Tested sample: All; Load voltage: 10 V (DC);
Continuous load current: 100 mA (DC);
Ambient temperature: 25 ° C 77 ° F
5
4
3
11. Turn off time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: 10 V (DC);
Continuous load current: 100 mA (DC);
Ambient temperature: 25 ° C 77 ° F
0.5
0.4
0.3
10 -8
10 -10
AQV251G
AQV252G
2
1
0.2
0.1
AQV252G
AQV251G
10 -12
0
10
20
30 40 50
60
0
0
10
20 30 40
50
0
0
10
20 30 40
50
Load voltage, V
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz; Ambient temperature: 25 ° C 77 ° F
500
400
300
200
AQV251G
LED forward current, mA
13. Max. switching frequency
Tested sample: AQV251G;
LED current: 5 mA;
Ambient temperature: 25 ° C 77 ° F
100
duty=50%
90
80
70
60
50
40
30
LED forward current, mA
100
AQV252G
20
10
0
0
10
20
30 40 50
60
0
0
20 40 60 80 100
Applied voltage, V
Load voltage, V × Load current, A
ASCTB144E 201208-T
Panasonic Corporation
Automation Controls Business Unit
industrial.panasonic.com/ac/e/
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相关代理商/技术参数
AQV-252G
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AQV252G2SX
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AQV252G2SZ
功能描述:固态继电器-PCB安装 PhotoMOS HE SOP 1 Form A
RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQV252G3
功能描述:RELAY PHOTOMOS SPST 60V 3.5A DIP 制造商:panasonic electric works 系列:PhotoMOS?? AQV 包装:管件 零件状态:在售 电路:SPST-NO（1 A 形） 输出类型:AC，DC 导通电阻（最大值）:60 mOhms 负载电流:3.5A 电压 - 输入:1.32VDC 电压 - 负载:0V ~ 60V 安装类型:通孔 端子类型:PC 引脚 封装/外壳:6-DIP（0.300"，7.62mm） 供应商器件封装:6-DIP 继电器类型:继电器 标准包装:50
AQV252G3A
功能描述:RELAY PHOTOMOS SPST 60V 3.5A SMT 制造商:panasonic electric works 系列:PhotoMOS?? AQV 包装:管件 零件状态:在售 电路:SPST-NO（1 A 形） 输出类型:AC，DC 导通电阻（最大值）:60 mOhms 负载电流:3.5A 电压 - 输入:1.32VDC 电压 - 负载:0V ~ 60V 安装类型:表面贴装 端子类型:鸥翼型 封装/外壳:6-SMD（0.300"，7.62mm） 供应商器件封装:6-SMD 继电器类型:继电器 标准包装:1,000
AQV252G3AX
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AQV252G3AZ
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